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| SHINDENGEN Schottky Rectifiers (SBD) Dual SF20SC3L 30V 20A FEATURES *oeTj150*Z OUTLINE DIMENSIONS Case : FTO-220 Unit : mm *oe Low VF = 0.45V *oe PRRSM avalanche guaranteed *oe Fully Isolated Molding *oe Dielectric strength 2kV guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage TemperatureTstg -55*150 Z * Operating Junction Temperature Tj 150 *Z V RM Maximum Reverse Voltage 30 V Repetitive Peak Surge RRSM Voltage VReverse width 0.5ms, duty 1/40 Pulse 35 V Average Rectified Forward Currentwave, R-load, With heatsink, Rating for each di I 50Hz sine O 20 A Peak Surge Forward Current sine wave, Non-repetitive 1 cycle peak value, Tj=25 * IFSM 50Hz 230 A Repetitive Peak Surge RRSM Power 10Es, Rating of per diode, Tj=25*Z PReverse width Pulse 660 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR Recommended torque* 0.3Nm*j * i F 0.5 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit V I=8A, FF Pulse measurement, Rating of per diode Forward Voltage Max.0.45 V Reverse Current IR V=V,M Pulse measurement, Rating of per Max.9mA RR diode Junction Capacitance Cj f=1MHz, V Rating of per diode R =10V, Typ.570 F p Thermal Resistance AEjc junction to case Max.2.0 *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd SF20SC3L 100 Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] SF20SC3L Junction Capacitance f=1MHz Tc=25C TYP per diode Junction Capacitance Cj [pF] 1000 100 0.1 1 10 Reverse Voltage VR [V] SF20SC3L 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Tc=125C [TYP] Reverse Current IR [mA] 10 Tc=100C [TYP] Tc=75C [TYP] 1 Tc=50C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 Reverse Voltage VR [V] SF20SC3L 40 35 Reverse Power Dissipation Reverse Power Dissipation PR [W] 30 25 20 15 10 5 0 DC D=0.05 0.1 0.2 0.3 0.5 SIN 0.8 0 5 10 15 20 25 30 Reverse Voltage VR [V] Tj = Tjmax 0 VR tp D=tp /T T SF20SC3L 16 14 Forward Power Dissipation Forward Power Dissipation PF [W] DC D=0.8 0.5 12 0.3 10 8 6 4 2 0 0.05 0.1 0.2 SIN 0 5 10 15 20 25 30 35 40 Average Rectified Forward Current IO [A] Tj = Tjmax IO 0 tp D=tp /T T SF20SC3L 40 Derating Curve Average Rectified Forward Current IO [A] 35 DC 30 25 20 D=0.8 0.5 SIN 0.3 15 0.2 10 5 0 0.1 0.05 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = VRM/2 0 0 IO VR tp D=tp /T T SF20SC3L 350 Peak Surge Forward Capability IFSM 10ms 10ms 300 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 250 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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